Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

In this paper, we have investigated the turn-around effect of the threshold voltage (Vth) shift in the case of an n-type long channel MOSFET during hot-carrier stress. This effect is explained by the interplay between interface states and oxide traps, i.e. by the partial compensation of the rapidly created oxide charges by the more slowly created interface states. Significant hole trapping is o...

Hot-carrier reliability of MOSFETs at room and cryogenic temperature

Excess Hot-Carrier Currents in SO1 MOSFETs and Its Implications

This work demonstrates that excess hot-carrier currents in SO1 MOSFETs are caused by self-heating. Self-heating-free Ism data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that ...

Physics-Based Modeling of Hot-Carrier Degradation

We present and verify a physics-based model of hot-carrier degradation (HCD). This model is based on a thorough solution of the Boltzmann transport equation. Such a solution can be achieved using either a stochastic solver based on the Monte Carlo approach or a deterministic counterpart that is based on representation of the carrier energy distribution function as a series of spherical harmonic...

Modeling hot-electrons effects in silicon-on-sapphire MOSFETs

A unified, closed form analytical drain current model for partially and fully depleted SOS MOSFETs was investigated. The analytical model was developed using first order principles of operation of the device and basic explanation of the physical constraints responsible for hot carriers effects. The approach solved for the channel field to find closed form solutions for the critical voltages giv...